dnls412e dnls412e low v ce(sat) npn surface mount transistor features ? epitaxial planar die construction ? low collector-emitter saturation resistance r ce(sat) = 57.5m at 4a ? high dc current gain h fe > 400 at i c = 3a ? complementary pnp type available (dpls315e) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-223 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.112 grams (approximate) 2 3 4 1 sot-223 ds31324 rev. 3 - 2 1 of 4 www.diodes.com dnls412e ? diodes incorporated new p p rroduct t ew oduc 2,4 3 1 collector emitte r base 4 3 2 1 c c b e top view schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 12 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5 v continuous collector current i c 4 a peak pulse current i cm 10 a thermal characteristics characteristic symbol value unit power dissipation @t a = 25c (note 3) p d 1 w thermal resistance, junction to ambient air (note 3) @t a = 25c r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" po licy can be found on our website at http://www.di odes.com/products/l ead_free/index.php . 3. device mounted on fr-4 pcb, pad lay out as shown on page 4 or in diodes inc. suggested pad layout doc ument ap02001, which c an be found on our website at http://www.di odes.com/datas heets/ap02001.pdf.
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage v (br)cbo 12 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 12 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 ? ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? ? 100 na v cb = 10v, i e = 0 emitter cutoff current i ebo ? ? 100 na v eb = 4v, i c = 0 on characteristics (note 4) collector-emitter saturation voltage v ce(sat) ? ? ? ? ? 0.02 0.03 0.06 0.20 0.23 0.04 0.06 0.18 0.35 0.40 v i c = 0.1a, i b = 1ma i c = 0.1a, i b = 0.5ma i c = 1a, i b = 50ma i c = 3a, i b = 20ma i c = 4a, i b = 50ma base-emitter saturation voltage v be(sat) ? ? 1.1 v i c = 3a, i b = 20ma base-emitter turn-on voltage v be(on) ? ? 1.0 v v ce = 2v, i c = 3a dc current gain h fe 500 400 100 ? ? ? ? ? ? ? v ce = 2v, i c = 0.1a v ce = 2v, i c = 3a v ce = 2v, i c = 10a ac characteristics transition frequency f t 150 ? ? mhz v ce = 5v, i c = 50ma, f = 50mhz input capacitance c ibo ? 240 ? pf v eb = 0.5v, f = 1mhz output capacitance c obo ? 35 ? pf v cb = 10v, f = 1mhz switching times t on t off ? ? 40 500 ? ? ns ns v cc = 10v, i c = 500ma i b1 = -i b2 = 50ma new product notes: 4. pulse test: pulse width 300 s. duty cycle 2.0%. 0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs. ambient temperature a 0.6 0.8 1.0 0 v , collector-emitter voltage (v) ce i, c o lle c t o r c u r r e n t (a) c fig. 2 typical collector current vs. collector-emitter voltage 01234 5 0 0.5 1.0 1.5 2.0 i = 1ma b i = 2ma b i = 3ma b 2.5 i = 4ma b i = 5ma b 3.0 3.5 4.0 ds31324 rev. 3 - 2 2 of 4 www.diodes.com dnls412e ? diodes incorporated
0.001 0.01 0.1 1 10 0 200 400 600 800 1,000 1,200 1,400 1,600 1,800 i , collector current (a) c v , collector-emitter saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0.001 0.01 0.1 1 10 i , collector current (a) c v , base-emitter turn-on voltage (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1. 2 0.001 0.01 0.1 1 10 fig. 6 typical base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 10 i , collector current (a) c v , base-emitter saturation voltage (v) be(sat) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 new product ordering information (note 5) device packaging shipping DNLS412E-13 sot-223 2500/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/ap2007.pdf. marking information n412 yww (top view) n412 = product type marking code yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 ds31324 rev. 3 - 2 3 of 4 www.diodes.com dnls412e ? diodes incorporated
ds31324 rev. 3 - 2 4 of 4 www.diodes.com dnls412e ? diodes incorporated package outline dimensions sot-223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm new product suggested pad layout: important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated.
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